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 Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBTA05 CMBTA06
SILICON EPITAXIAL TRANSISTORS
N-P-N transistor
Marking CMBTA05 = 1H CMBTA06 = 1G
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) VCBO Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 C Ptot D.C. current gain hFE IC = 100 mA; VCE = 1 V Transition frequency at f = 100 MHz fT IC = 10 mA; VCE = 2 V Collector-emitter saturation voltage VCEsat IC = 100 mA; IB = 10 mA CMBT A05 max. 60 max. 60 max. max. max. min. min. max. A06 80 V 80 V V mA mW
4 500 250 100 100 0.25
MHz
V
Continental Device India Limited
Data Sheet
Page 1 of 3
CMBTA05 CMBTA06
RATINGS (at TA = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VCBO Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 C Ptot Storage temperature Tstg Junction temperature Tj THERMAL CHARACTERISTICS Tj = P (Rth j-t + Rth t-s + Rth s-a) + Tamb Thermal resistance from junction to ambient
max. max. max. max. max. max. max.
60 60
80 V 80 V 4 V 500 mA 250 mW -55 to +150 C 150 C
Rth j-a
=
500
K/W
CHARACTERISTICS (at TA = 25C unless otherwise specified) CMBT A05 Collector-emitter breakdown voltage V(BR)CEO min. 60 IC = 1 mA; IB = 0 Emitter-base breakdown voltage V(BR)EBO min. IC = 0; IE = 100 A Collector cut-off current ICEO max. VCE = 60 V; IB = 0 ICBO max. 0.1 VCB = 60 V; IE = 0 ICBO max. VCB = 80 V; IE = 0 Saturation voltages VCEsat max. IC = 100 mA; IB = 10 mA Base-emitter on voltage VBE(on) max. IC = 100 mA; VCE = 1 V D.C. current gain hFE min. IC = 10 mA; VCE = 1 V hFE min. IC = 100 mA; VCE = 1 V Transition frequency at f = 100 MHz fT min. IC = 10 mA; VCE = 2 V
A06 80 V 4 0.1 V A A 0.1 A V V
0.25 1.2 100 100 100
MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com
Continental Device India Limited Data Sheet Page 3 of 3
CDIL is a registered Trademark of


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